2002. 7. 10 1/4 semiconductor technical data krc410e~krc414e epitaxial planar npn transistor revision no : 1 switching application. interface circuit and driver circuit application. features with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. high packing density. dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. common (emitter) 2. in (base) 3. out (collector) + _ + _ + _ + _ + _ + _ equivalent circuit maximum rating (ta=25 ) mark spec r1 c e b type name marking characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma characteristic symbol rating unit collector power dissipation p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na dc current gain h fe v ce =5v, i c =1ma 120 - - collector-emitter saturation voltage v ce(sat) i c =10ma, i b =0.5ma - 0.1 0.3 v transition frequency f t * v ce =10v, i c =5ma - 250 - mhz input resistor krc410e r 1 - 4.7 - k KRC411E - 10 - krc412e - 100 - krc413e - 22 - krc414e - 47 - type krc410e KRC411E krc412e krc413e krc414e mark nk nm nn no np electrical characteristics (ta=25 )
2002. 7. 10 2/4 krc410e~krc414e revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit switching time rise time krc410e t r v o =5v v in =5v r l =1k - 0.025 - s KRC411E - 0.03 - krc412e - 0.3 - krc413e - 0.06 - krc414e - 0.11 - storage time krc410e t stg - 3.0 - KRC411E - 2.0 - krc412e - 6.0 - krc413e - 4.0 - krc414e - 5.0 - fall time krc410e t f - 0.2 - KRC411E - 0.12 - krc412e - 2.0 - krc413e - 0.9 - krc414e - 1.4 -
2002. 7. 10 3/4 krc410e~krc414e revision no : 1 collector current i (ma) dc current gain h 0.1 fe 300 0.3 1 3 2k h - i fe c c 10 30 100 10 30 50 100 500 1k ta=100 c ta=25 c ta=-25 c v =5v ce 0.3 collector current i (ma) 0.1 dc current gain h fe 100 30 50 10 300 500 1k 2k v =5v 10 3 1 ta=100 c ta=25 c ta=-25 c ce 100 30 c h - i fe c dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3 100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe krc410e KRC411E krc412e krc410e 0.3 collector current i (ma) 0.1 collector-emitter saturatin ce(sat) 0.1 0.05 0.03 0.01 1 0.5 0.3 2 i /i =20 10 3 1 ta=-25 c ta=25 c ta=100 c c 100 30 c v - i ce(sat) c voltage v (v) collector current i (ma) collector-emitter saturatin i /i =20 ta=-25 c ta=100 c 0.3 0.1 0.3 0.5 0.01 0.03 0.05 0.1 voltage v (v) ce(sat) 1 c 1310 ta=25 c KRC411E 2 ce(sat) v - i c 30 100 c b b ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 3 10 100 30 c i /i =20 krc412e 0.5 0.3 1 2 b c v - i ce(sat) c
2002. 7. 10 4/4 krc410e~krc414e revision no : 1 dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3 100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe krc413e ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 310 100 30 c i /i =20 krc413e 0.5 0.3 1 2 b c v - i ce(sat) c dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe krc414e ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 310 100 30 c i /i =20 krc414e 0.5 0.3 1 2 b c v - i ce(sat) c
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